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 January 2001 Advance Information
(R)
AS7C1025A AS7C31025A
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)
Features
* * * * * AS7C1025A (5V version) AS7C31025A (3.3V version) Industrial and commercial temperatures Organization: 131,072 x 8 bits High speed - 10/10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time * Low power consumption: ACTIVE - 660 mW (AS7C1025A) / max @ 10 ns (5V) - 324 mW (AS7C31025A) / max @ 10 ns (3.3V) * Low power consumption: STANDBY - 55 mW (AS7C1025A) / max CMOS (5V) - 36 mW (AS7C31025A) / max CMOS (3.3V)
* * * * * *
Latest 6T 0.25u CMOS technology 2.0V data retention Easy memory expansion with CE, OE inputs Center power and ground TTL/LVTTL-compatible, three-state I/O JEDEC-standard packages - 32-pin, 300 mil SOJ - 32-pin, 400 mil SOJ - 32-pin, TSOP II * ESD protection 2000 volts * Latch-up current 200 mA
32-pin TSOP II
A0 A1 A2 A3 CE I/O0 I/O1 VCC GND I/O2 I/O3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE I/O7 I/O6 GND VCC I/O5 I/O4 A12 A11 A10 A9 A8
Pin arrangement
Logic block diagram
VCC GND Input buffer A0 A1 A2 A3 A4 A5 A6 A7 A8 I/O7
Row decoder
512x256x8 Array (1,048,576)
Sense amp
32-pin SOJ (300 mil) 32-pin SOJ (400 mil) I/O0 WE OE CE
A0 A1 A2 A3 CE I/O0 I/O1 VCC GND I/O2 I/O3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE I/O7 I/O6 GND VCC I/O5 I/O4 A12 A11 A10 A9 A8
Column decoder A9 A10 A11 A12 A13 A14 A15 A16
Control circuit
Selection guide
AS7C1025A-10 AS7C31025A-10 Maximum address access time Maximum output enable access time Maximum operating current Maximum CMOS standby current AS7C1025A AS7C31025A AS7C1025A AS7C31025A 10 3 120 90 10 10 AS7C1025A-12 AS7C31025A-12 12 3 110 80 10 10 AS7C1025A-15 AS7C31025A-15 15 4 100 80 10 10 AS7C1025A-20 AS7C31025A-20 20 5 100 80 15 15 Unit ns ns mA mA mA mA
2/6/01; V.0.9
Alliance Semiconductor
AS7C1025A AS7C31025A
AS7C1025A AS7C31025A
P. 1 of 8
Copyright (c) Alliance Semiconductor. All rights reserved.
(R)
AS7C1025A AS7C31025A
Functional description
The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 3/3/4/5 ns are ideal for high-performance applications. The chip enable input CE permits easy memory and expansion with multiple-bank memory systems. When CE is high the devices enter standby mode. The standard AS7C1025A is guaranteed not to exceed 55 mW power consumption in standby mode. Both devices also offer 2.0V data retention. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0-I/O7 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chips drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 5V supply (AS7C1025A) or 3.3V supply (AS7C31025A). The AS7C1025A and AS7C31025A are packaged in common industry standard packages.
Absolute maximum ratings
Parameter Voltage on VCC relative to GND Voltage on any pin relative to GND Power dissipation Storage temperature (plastic) Ambient temperature with VCC applied DC current into outputs (low) Device AS7C1025A AS7C31025A Symbol Vt1 Vt1 Vt2 PD Tstg Tbias IOUT Min -0.50 -0.50 -0.50 - -65 -55 - Max +7.0 +5.0 VCC + 0.5 1.0 +150 +125 20 Unit V V V W
o o
C C
mA
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CE H L L L WE X H H L OE X H L X Data High Z High Z DOUT DIN Mode Standby (ISB, ISB1) Output disable (ICC) Read (ICC) Write (ICC)
Key: X = Don't Care, L = Low, H = High
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Alliance Semiconductor
P. 2 of 8
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AS7C1025A AS7C31025A
Recommended operating conditions
Parameter Supply voltage Device AS7C1025A AS7C31025A AS7C1025A Input voltage AS7C31025A Both Ambient operating temperature
VIL min. = -3.0V for pulse width less than tRC/2.
Symbol VCC VCC VIH VIH VIL TA TA
Min 4.5 3.0 2.2 2.0 -0.5 0 -40
Nominal 5.0 3.3 - - - - -
Max 5.5 3.6 VCC + 0.5 VCC + 0.5 0.8 70 85
Unit V V V V V
o o
commercial industrial
C C
DC operating characteristics (over the operating range)1
-10 Parameter
Input leakage current Output leakage current Operating power supply current Standby power supply current1 Output voltage Data retention current
-12 Min
-
-15 Min
-
-20
Sym
| ILI |
Test conditions
VCC = Max, VIN = GND to VCC VCC = Max, CE = VIH, Vout = GND to VCC
Device
Both
Min
-
Max
1
Max
1
Max Min Max Unit
1 - 1 A
| ILO |
Both AS7C1025A
- - - - - - - - 2.4
1 120 90 30 30 10 10 .04
- - - - - - - - 2.4
1 110 80 25 25 10 10 0.4 -
- - - - - - - - 2.4
1 100 80 20 20 10 10 0.4 -
- - - - - - - - 2.4
1 100 80 20 20 15 15 0.4 -
A
ICC
CE = VIL, f = fMax, IOUT = 0 mA
AS7C31025A AS7C1025A AS7C31025A AS7C1025A AS7C31025A AS7C1025A AS7C31025A
mA
ISB ISB1 VOL VOH ICCDR
CE = VIH, f = fMax, fOUT = 0 CE VCC-0.2V, VIN 0.2V or VIN VCC -0.2V, f = 0, fOUT = 0 IOL = 8 mA, VCC = Min IOH = -4 mA, VCC = Min VCC = 2.0V CE VCC - 0.2V VIN VCC - 0.2V or VIN 0.2V
mA mA V V mA mA
AS7C1025A
AS7C31025A
-
-
1
1
-
-
1
1
-
-
1
1 -
5
5
Capacitance (f = 1 MHz, Ta = 25 oC, VCC = NOMINAL)2
Parameter Input capacitance I/O capacitance Symbol CIN CI/O Signals A, CE, WE, OE I/O Test conditions VIN = 0V VIN = VOUT = 0V Max 5 7 Unit pF pF
2/6/01; V.0.9
Alliance Semiconductor
P. 3 of 8
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AS7C1025A AS7C31025A
Read cycle (over the operating range)3,9
-10 Parameter Read cycle time Address access time Chip enable (CE) access time Output enable (OE) access time Output hold from address change CE Low to output in low Z CE Low to output in high Z OE Low to output in low Z OE High to output in high Z Power up time Power down time Symbol tRC tAA tACE tOE tOH tCLZ tCHZ tOLZ tOHZ tPU tPD 10 - - - 2 0 - 0 - 0 - - 10 10 3 - - 3 - 3 - 10 12 - - - 3 0 - 0 - 0 - -12 - 12 12 3 - - 3 - 3 - 12 15 - - - 3 0 - 0 - 0 - -15 - 15 15 4 - - 4 - 4 - 15 20 - - - 3 0 - 0 - 0 - -20 Min Max - 20 20 5 - - 5 - 5 - 20 Unit ns ns ns ns ns ns ns ns ns ns ns 5 4, 5 4, 5 4, 5 4, 5 4, 5 4, 5 3 3 Notes Min Max Min Max Min Max
Key to switching waveforms
Rising input Falling input Undefined/don't care
Read waveform 1 (address controlled)3,6,7,9
tRC Address tAA DOUT Data valid tOH
Read waveform 2 (CE and OE controlled)3,6,8,9
CE tOE OE DOUT Supply current tPU tACE tCLZ 50% Data valid tPD 50% ICC ISB tOLZ tOHZ tCHZ tRC1
2/6/01; V.0.9
Alliance Semiconductor
P. 4 of 8
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AS7C1025A AS7C31025A
Write cycle (over the operating range)11
-10 Parameter Write cycle time Chip enable (CE) to write end Address setup to write end Address setup time Write pulse width Address hold from end of write Data valid to write end Data hold time Write enable to output in high Z Output active from write end Symbol tWC tCW tAW tAS tWP tAH tDW tDH tWZ tOW 1 Min 10 8 8 0 7 0 5 0 6 12 10 9 0 8 0 6 0 - 1 -12 Max - - - - - - - - 6 - 15 12 10 0 9 0 8 0 - 1 -15 Min Max - - - - - - - - 6 - 20 12 12 0 12 0 10 0 - 2 -20 Min Max - - - - - - - - 8 - Unit ns ns ns ns ns ns ns ns ns ns 4, 5 4, 5 4, 5 Notes Max Min
Write waveform 1 (WE controlled)10,11
tWC tAW Address tWP WE tAS DIN tWZ DOUT tDW Data valid tOW tDH tAH
Write waveform 2 (CE controlled)10,11
tAW Address tAS CE tWP WE tWZ DIN DOUT tDW Data valid tDH tCW tWC tAH
2/6/01; V.0.9
Alliance Semiconductor
P. 5 of 8
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AS7C1025A AS7C31025A
Data retention characteristics (over the operating range)
Parameter VCC for data retention Data retention current Chip enable to data retention time Operation recovery time Input leakage current Symbol VDR ICCDR tCDR tR | ILI | Test conditions VCC = 2.0V CE VCC - 0.2V VIN VCC - 0.2V or VIN 0.2V Min 2.0 - 0 tRC - Max - 500 - - 1 Unit V A ns ns A
Data retention waveform
Data retention mode VCC VCC tCDR CE VIH VDR VIH VDR 2.0V VCC tR
AC test conditions
- - - - Output load: see Figure B or Figure C. Input pulse level: GND to 3.0V. See Figure A. Input rise and fall times: 2 ns. See Figure A. Input and output timing reference levels: 1.5V.
Thevenin equivalent: 168W DOUT +1.728V (5V and 3.3V) +5V 480W +3.0V GND 90% 10% 2 ns 90% 10% DOUT 255W C(14) DOUT 255W +3.3V 320W C(14)
Figure A: Input pulse
GND Figure B: 5V Output load
GND Figure C: 3.3V Output load
Notes
1 2 3 4 5 6 7 8 9 10 11 12 13 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. This parameter is sampled, but not 100% tested. For test conditions, see AC Test Conditions, Figures A, B, and C. tCLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured 500mV from steady-state voltage. This parameter is guaranteed, but not 100% tested. WE is High for read cycle. CE and OE are Low for read cycle. Address valid prior to or coincident with CE transition Low. All read cycle timings are referenced from the last valid address to the first transitioning address. CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle. All write cycle timings are referenced from the last valid address to the first transitioning address. NA. C=30pF, except all high Z and low Z parameters, where C=5pF.
2/6/01; V.0.9
Alliance Semiconductor
P. 6 of 8
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AS7C1025A AS7C31025A
Package dimensions
32-pin TSOP II
32-pin TSOP II (mm) Symbol Min - 0.05 0.3 0.12 20.82 10.03 11.56 1.27 BSC 0.40 0.95 REF. 0 5 0.60 Max 1.2 0.15 0.52 0.21 21.08 10.29 11.96 A A1 b
E1 E
N
N/2+1
C D E1
1 D
N/2
E e
A Seating plane
ZD
L ZD
c
b
A1
L c
32-pin SOJ 300 mil Symbol A A1 A2 Min 0.025 0.086 0.026 0.014 0.006 0.820 0.250 0.292 0.330 Max 0.145 0.105 0.032 0.020 0.013 0.830 0.275 0.305 0.340
32-pin SOJ 400 mil Min 0.025 0.086 0.026 0.015 0.007 0.820 0.360 0.395 0.435 Max 0.145 0.115 0.032 0.020 0.013 0.830 0.380 0.405 0.445
32-pin SOJ 300 mil/400 mil e D
B b
E1 E2
c D E
A b Seating Plane
Pin 1 A1 c A2 E
B
E1 E2 e
0.050 BSC
0.050 BSC
2/6/01; V.0.9
Alliance Semiconductor
P. 7 of 8
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AS7C1025A AS7C31025A
Ordering codes
Package \ Access time Voltage
5V TSOP II 3.3V 5V 300-mil SOJ 3.3V 5V 400-mil SOJ 3.3V
Temperature
Commercial Industrial Commercial Industrial Commercial Industrial Commercial Industrial Commercial Industrial Commercial Industrial
10 ns
AS7C1025A-10TC AS7C1025A-10TI AS7C31025A-10TC AS7C31025A-10TI AS7C1025A-10TJC AS7C1025A-10TJI AS7C31025A-10TJC AS7C31025A-10TJI AS7C1025A-10JC AS7C1025A-10JI AS7C31025A-10JC AS7C31025A-10JI
12 ns
AS7C1025A-12TC AS7C1025A-12TI AS7C31025A-12TC AS7C31025A-12TI AS7C1025A-12TJC AS7C1025A-12TJI AS7C31025A-12TJC AS7C31025A-12TJI AS7C1025A-12JC AS7C1025A-12JI AS7C31025A-12JC AS7C31025A-12JI
15 ns
AS7C1025A-15TC AS7C1025A-15TI AS7C31025A-15TC AS7C31025A-15TI AS7C1025A-15TJC AS7C1025A-15TJI AS7C31025A-15TJC AS7C31025A-15TJI AS7C1025A-15JC AS7C1025A-15JI AS7C31025A-15JC AS7C31025A-15JI
20 ns
AS7C1025A-20TC AS7C1025A-20TI AS7C31025A-20TC AS7C31025A-20TI AS7C1025A-20TJC AS7C1025A-20TJI AS7C31025A-20TJC AS7C31025A-20TJI AS7C1025A-20JC AS7C1025A-20JI AS7C31025A-20JC AS7C31025A-20JI
Part numbering system
AS7C SRAM prefix X Blank=5V CMOS 3=3.3V CMOS 1025 Device number -XX Access time X Package: T = TSOP II J = SOJ X Temperature range C = Commercial, 0C to 70C I = Industrial, -40C to 85C
2/6/01; V.0.9
Alliance Semiconductor
P. 8 of 8
(c) Copyright Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms and Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance's Terms and Conditions of Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights, mask works rights, trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use.


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